The global Silicon Oxide (SiOx) ReRAM technology market was estimated to be US$ 18.11 Mn in 2021 and is anticipated to reach US$ 79.88 Mn by 2028, growing at a CAGR of 23.6% over the forecast period. Random Access Memory (RAM) is a type of non-volatile RAM that alters the strength of a dielectric material called memristor. A memristor is an electrical device whose resistance depends on the electrical charge flux through the device. Currently interest in resistance switching is rising rapidly therefore the promise of modern high-density, low-power high-speed non-volatile memory devices is enticing enough, but beyond that there are exciting potential possibilities for machine learning and artificial intelligence and neuromorphic computing hardware acceleration applications. For resistance-switching technologies silicon oxide is an outstanding alternative providing a range of compelling benefits over competing material systems. Silicon oxide is commonly used in IC manufacturing as an insulator, but the ability to transfer resistance with low energy to very thin layers of the material allows it to be a highly promising ReRAM candidate.
Request for Sample Copy of This Report@ https://www.absolutemarketsinsights.com/request_sample.php?id=729
Scientists from University College London (UCL) have developed a non-volatile resistive memory structure which is based on silicon oxide. Resistive RAM (ReRAM), also referred to as a memristor, is now being thoroughly investigated as a possible substitute for flash memory. Through stacking flash memory cells vertically, some more memory capacity scaling can be done, although it is assumed that resistive memory will displace flash memory if it can provide both planar and z-direction scaling. Beyond memory storage, the technology has potential applications this will boost the market growth over the forecast period. Resistive switching memory (RRAM) is one of the most advanced technologies with low power, high density, and enhanced performance for next-generation storage class memory. The biggest obstacle to RRAM industrialization is the problems with variability and noise, causing distribution expansion that affects retention even at room temperature. Continuous research is going on in this field in order to eliminate these challenges in the future. Recent research using silicon oxide (SiOx) ReRAM technology from Weebit Nano describes a brain-inspired artificial intelligence (AI) device that can perform high-precision, unsupervised learning tasks. Weebit Nano announced that it is designing silicon oxide based ReRAM devices, which ensures that ReRAM chips can be produced in existing factories, such strategies will allow decreasing the costs of ReRAM. Increasing adoption of this technology in various applications like AI and IoT is boosting the growth of this market over the forecast period.
Researchers at Politecnico Milan (Polytechnic University of Milan) carried out the work and presented it in a recent joint paper with the company describing a novel AI self-learning demonstration based on SiOx ReRAM from Weebit. Due to its ability to be 1,000 times faster by using 1,000 times less energy than NAND, while at the same time lasting 100 times longer, memory technology is considered a prime candidate for competitive NAND flash memory. SiOx ReRAM from Weebit is also attractive because it can exploit existing processes of production. Several testing organizations have also eyed ReRAM for AI applications. The university developed a hardware design that combines the efficiency of convolutionary neural networks (CNNs) with the plasticity of brain-inspired spiking neural networks (SNN) using Weebit's ReRAM to allow the hardware to learn new things without forgetting previously acquired knowledge tasks.
Some of the larger firms are placing more emphasis on this technology now, also startups are making progress in this field. In the embedded space, ReRAM has significant advantages, including the replacement of flash technology and external non-volatile memories with a quicker, lower-power ReRAM alternative, companies use ReRAM silicon oxide with standard materials that easily fit into existing production lines. In addition, in many regions the rising adoption of sensor technology such as wearable and AI-enabled devices has boosted demand for fast data transfers and high storage density, thereby creating a tremendous opportunity or possibility for the global growth of the Silicon Oxide ReRAM technology.
In addition, the increasing global installation of the Internet of Things Devices also provides scope for the growth of this market. A major increase in demand for linked devices, such as wearables, IoT and AI-based systems, has been seen in recent years. In addition, connected devices are bound to increase with the coming of smart cities and smart homes, which in turn will increase the demand for strong servers with memory space thus boosting the demand for silicon oxide ReRAM market over the years.
The detailed research study provides qualitative and quantitative analysis of the Global Silicon Oxide (SiOx) ReRAM Technology market. The Silicon Oxide (SiOx) ReRAM Technology market has been analyzed from demand as well as supply side. The demand side analysis covers market revenue across regions and further across all the major countries. The supply side analysis covers the major market players and their presence and strategies. The geographical analysis done emphasizes on each of the major countries across North America, Europe, Asia Pacific, Middle East & Africa and Latin America.
Request for Customization@ https://www.absolutemarketsinsights.com/request_for_customization.php?id=729
Key Findings of the Report:
- Asia Pacific is projected to have a good role in the ReRAM Technology Global Silicon Oxide (SiOx) market. Some of the major countries driving growth in the Asia Pacific market are China, South Korea and India. The rising consumer electronics and automotive industry is fueling demand in Asia Pacific countries for this technology.
- In addition, several organizations are setting up data centers in this area which will also increase the market demand for resistive RAM. Because of increasing enterprise servers, data centers, AI and connected infrastructure, developing nations such as India, China and Japan will drive the growth of the market in this area.
- The major players operating in the market include Silicon Oxide (SiOx) ReRAM Technology market include Weebet and other market participants.
Global Silicon Oxide (SiOx) ReRAM Technology Market
- By Application
- Embedded Applications
- Artificial Intelligence (AI) Applications
- Internet of Things (IoT) Devices
- Smallest Geometries
- Others
- Persistent Memory (PM)
- Neuromorphic Computing
- Storage
- Others
- Embedded Applications
- By End Users
- Small and Medium Sized Enterprises
- Large Enterprises
- By Region
- North America
- U.S.
- Canada
- Mexico
- Rest of North America
- Europe
- France
- The UK
- Spain
- Germany
- Italy
- Nordic Countries
- Benelux Union
- Rest of Europe
- Asia Pacific
- China
- Japan
- India
- New Zealand
- Australia
- South Korea
- Southeast Asia
- Indonesia
- Thailand
- Malaysia
- Singapore
- Rest of Southeast Asia
- Rest of Asia Pacific
- Middle East and Africa
- Saudi Arabia
- UAE
- Egypt
- Kuwait
- South Africa
- Rest of Middle East & Africa
- Latin America
- Argentina
- Brazil
- Rest of Latin America
- North America
Get Full Information of this premium report@ https://www.absolutemarketsinsights.com/reports/Silicon-Oxide-SiOx-ReRAM-Technology-2021---2028-729
About Us:
Absolute Markets Insights strives to be your main man in your business resolve by giving you insight into your products, market, marketing, competitors, and customers. Visit …
Contact Us:
Email id: [email protected]
Contact Name: Shreyas Tanna
Phone: +91-740-024-2424